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Superconductivity, critical current density, and flux pinning in MgB_{2-x}(SiC)_{x/2} superconductor after SiC nanoparticle doping

机译:超导性,临界电流密度和磁通钉扎   siC纳米颗粒掺杂后mgB_ {2-x}(siC)_ {x / 2}超导体

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摘要

We investigated the effect of SiC nano-particle doping on the crystal latticestructure, critical temperature T_c, critical current density J_c, and fluxpinning in MgB_2 superconductor. A series of MgB_{2-x}(SiC)_{x/2} samples withx = 0 to 1.0 were fabricated using in-situ reaction process. The contraction ofthe lattice and depression of T_c with increasing SiC doping level remainedrather small due to the counter-balanced effect of Si and C co-doping. The highlevel Si and C co-doping allowed the creation of intra-grain defects and highlydispersed nano-inclusions within the grains which can act as effective pinningcenters for vortices, improving J_c behavior as a function of the appliedmagnetic field. The enhanced pinning is mainly attributable to thesubstitution-induced defects and a local structure fluctuations within grains.A pinning mechanism is proposed to account for different contributions ofdifferent defects in MgB_{2-x}(SiC)_{x/2} superconductors.
机译:我们研究了SiC纳米颗粒掺杂对MgB_2超导体中晶格结构,临界温度T_c,临界电流密度J_c和磁通钉扎的影响。使用原位反应工艺制备了一系列MgB_ {2-x}(SiC)_ {x / 2}样品,其中x = 0至1.0。由于Si和C共掺杂的平衡作用,随着SiC掺杂量的增加,T_c的晶格收缩和凹陷减小。高水平的Si和C共掺杂允许在晶粒内产生晶粒内缺陷和高度分散的纳米夹杂物,这些夹杂物可作为涡旋的有效钉扎中心,从而根据施加的磁场改善J_c行为。钉扎的增强主要归因于取代引起的缺陷和晶粒内局部结构的波动。提出了钉扎机制,以解决MgB_ {2-x}(SiC)_ {x / 2}超导体中不同缺陷的不同贡献。

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